Semiconductor device manufacturing: process – Having organic semiconductive component
Reexamination Certificate
2008-03-04
2008-03-04
Rose, Kiesha L. (Department: 2809)
Semiconductor device manufacturing: process
Having organic semiconductive component
C257SE27117, C257SE51001, C257SE21005
Reexamination Certificate
active
11177602
ABSTRACT:
The present invention provides apparatus and a method of fabricating the apparatus. The apparatus includes a substrate having a surface and an organic field-effect transistor (OFET) located adjacent the surface of the substrate. The OFET comprising a gate, a channel, a source electrode, and a drain electrode. The channel comprises a densified layer of organic molecules with conjugated multiple bonds, axes of the organic molecules being oriented substantially normal to the surface.
REFERENCES:
patent: 5546889 (1996-08-01), Wakita et al.
patent: 6555411 (2003-04-01), Bao et al.
patent: 6596569 (2003-07-01), Bao et al.
patent: 6661024 (2003-12-01), Zhang et al.
patent: 6905906 (2005-06-01), Sirringhaus et al.
patent: 6946676 (2005-09-01), Kelley et al.
patent: 7132680 (2006-11-01), Afzali-Ardakani et al.
patent: 2003/0211665 (2003-11-01), Bao et al.
patent: 0 460 242 (1991-12-01), None
patent: 1 355 323 (2003-10-01), None
patent: WO 03/056641 (2003-07-01), None
Fundamentals of Physics, 7th Edition David Halliday,. Robert resnick, Jearl Walker; Wiley Internation Edition IDSN 0-471-46509-7; p. 317.
Jan Genzer and Kirill Efimenko; “Creating Long Lived Superhydrophobic Polymer Surfaces Through Mechanically Assembled Monolayers”; Science vol. 290, Dec. 15, 2000; pp. 2130-2133.
J. Collet, S. Lenfant, D. Vuillaume; O. Bouloussa, F. Rondelez, J.M Gay, K. Kham and C. Chevrot; “High Anisotropic Conductivity in Organic Insulator/Semiconductor Monolayer Heterostructure”; 2000 American Institute of Physics; Applied Physics Letters, vol. 76, No. 10, Mar. 6, 2000; pp. 1339-1341.
X. Linda Chen, Andrew J. Lovinger, Zhenan Bao and Joyce Sapjeta; Morphological and Transistor Studies of Organic Molecular Semiconductors with Anisotropic Electrical Characteristics; 2001 American Chemical Society, Chem. Mater. 2001, 13; pp. 1341-1348.
Guofeng Xu, Zhenan Bao and John T. Groves: “Langmuir-Blodgett Films of Regioregular Poly (3-Hexylthiophene) as Field-Effect Transistors”; 2000 American Chemical Society, Langmuir 2000, 16, pp. 1834-1841.
Karl R. Amundson, B. Joyce Sapjeta, Andrew J. Lovinger, Zhenan Bao; An In-Plane Antistrophic Organic Semiconductor Based Upon Poly (3-Hexyl Thiophene); Elsevier Science B.V., Thin Solid Films 414 (2002); pp. 143-149.
H. Sirringhaus, R.J. Wilson, R.H. Friend, M. Inasekaran, W. Su; E.P. Woo, M. Grell and D.D.C. Bradley; “Mobility Enhancement in Conjugated Polymer Field-Effect Transistors Through Chain Alignment in a Liquid Crystalline Phase”; American Institute of Physics, Applied Physics Letters, vol. 77, No. 3, Jul. 17, 2000; pp. 406-408.
Raluca I. Gearba, Matthias Lehmann, Jeremy Levin, Dimitri A. Ivanov, Michel H. J. Koch, Joaquin Barbera, Michael G. Debije, Jorge Piris and Yves H. Geerts; “Tailoring Discotic Mesophases: Collumnar Order Enforced With Hydrogen Bonds”; Advanced Materials 2003, 15, No. 19, Oct. 2; pp. 1614-1618.
Pearson et al. “Field-Effect Transistor Based on Organometallic Langmuir-Blodgett Film” Electronics Letters, IEE Stevanage, GB, Volumer 29, No. 15, Jul. 22, 1993, pp. 1377-1378, XP000385679, ISSN: 0013-5194.
Yu-Tai Tao, et al. “Structure Evolution of Aromatic-Derivatized Thiol Monolayers on Evaporated Gold”, Langmuir, vol. 13, No. 15 (1997), pp. 4018-4023.
Lucent Technologies - Inc.
Rose Kiesha L.
Whalen Daniel
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