Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor – With peripheral feature due to separation of smaller...
Reexamination Certificate
2005-06-21
2005-06-21
Quach, T. N. (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Physical configuration of semiconductor
With peripheral feature due to separation of smaller...
C257S627000, C257S797000
Reexamination Certificate
active
06909165
ABSTRACT:
A mirror-polished obverse surface and a roughened reverse surface of the conventional GaN wafers have been discriminated by difference of roughness on the surfaces with human eyesight. The difference of the surfaces is rather ambiguous. Cracks/breaks and distortion of the wafers have been likely to occur because the roughness of the reverse surface is apt to bring fine particles.To discern an obverse from a reverse without making use of the difference of the surface roughness, the present invention provides an obverse/reverse discriminative rectangular nitride semiconductor wafer having a longer slanting edge and a shorter slanting edge at obversely-clockwise neighboring corners, or having an asymmetric slanting edge at a corner, or having asymmetrically bevelled parts or having discriminating characters marked by laser. The present invention can make the reverse surface mirror-polished and smooth, so that particles on the reverse surface and distortion, cracks or breaks of the wafer decrease.
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Hirano Tetsuya
Nakayama Masahiro
McDermott Will & Emery LLP
Quach T. N.
Sumitomo Electric Industries Ltd.
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