Oblique implantation in forming base of bipolar transistor

Details Oblique implantation in forming base of bipolar transistor Oblique implantation in forming base of bipolar transistor

1997-02-21

1999-05-04

Nguyen, Tuan H.

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

438345, 438350, 438525, H01L 21331

Patent

active

058997237

ABSTRACT:
In fabricating a bipolar transistor, semiconductor dopant is introduced into a semiconductor body during a base doping operation to define a doped region, that forms a PN junction with adjoining semiconductor material and abuts a slanted sidewall of a field insulating region. The doped region constitutes a base region for the transistor. The base doping operation entails ion implanting the dopant into the body at a tilt angle of at least 15.degree. relative to the vertical. The minimum lateral base thickness and, the minimum sidewall base thickness increase relative to the minimum vertical base thickness. As a result, the magnitude of the collector-to-emitter breakdown voltage typically increases. The minimum lateral, sidewall, and vertical base thicknesses vary with the tilt angle and base-implant energy in such a manner that the minimum lateral base thickness and the minimum sidewall base thickness are separately controllable from the minimum vertical base thickness.

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