Null-field magnetron apparatus with essentially flat target

Details Null-field magnetron apparatus with essentially flat target Null-field magnetron apparatus with essentially flat target

2002-02-05

2004-01-27

Wong, Don (Department: 2821)

Electric lamp and discharge devices: systems

High energy particle accelerator tube

C204S298120

Reexamination Certificate

active

06683425

ABSTRACT:

BACKGROUND OF THE INVENTION
1. Field of the Invention
This invention relates generally to device fabrication, and more particularly to apparatus and methods for magnetron sputtering.
2. Description of the Background Art
In a physical vapor deposition (“PVD”) process, atoms sputtered from a target are deposited onto a substrate. The target, which could be made of aluminum or copper, for example, is located a distance away from the substrate. A plasma of a gas suitable for sputtering, such as argon, is maintained between the target and the substrate. Ions of the sputtering gas are accelerated onto the target. When accelerated ions hit the target, atoms are sputtered from the target and onto the substrate. The use of magnetic fields to enhance a PVD process is also known as magnetron sputtering.
In any PVD process, it is desirable to achieve good deposition uniformity both at feature level and across the substrate. It is also important to have high deposition rates in order to maximize the number of substrates that can be processed within a certain period of time. Ideally, a magnetron apparatus capable of providing good deposition uniformity at high deposition rates should also have a relatively low cost of ownership.
SUMMARY
The present invention relates to a novel magnetron apparatus. In one embodiment, a magnetron apparatus includes an essentially flat target having a low height-to-width ratio. The essentially flat target may be planar, dish-shaped, or stepped-shape, for example. A main magnet is located behind the flat target to provide main magnetic fields. Magnets located near the target and underneath a substrate may be configured to maintain a high density plasma and to control the flow of plasma onto the substrate.


REFERENCES:
patent: 4622121 (1986-11-01), Wegmann et al.
patent: 4865712 (1989-09-01), Mintz
patent: 5171415 (1992-12-01), Miller et al.
patent: 5188717 (1993-02-01), Broadbent et al.
patent: 5252194 (1993-10-01), Demaray et al.
patent: 5439574 (1995-08-01), Kobayashi et al.
patent: 5482611 (1996-01-01), Helmer et al.
patent: 5593551 (1997-01-01), Lai
patent: 6096180 (2000-08-01), Sichmann
patent: 6179973 (2001-01-01), Lai et al.
patent: 6361667 (2002-03-01), Kobayashi et al.
patent: 6391163 (2002-05-01), Pavate et al.
patent: 6444105 (2002-09-01), Lai et al.
patent: 6471830 (2002-10-01), Moslehi et al.
patent: 6497796 (2002-12-01), Ashtiani et al.

Affiliated with

Also associated with

Rating

Null-field magnetron apparatus with essentially flat target does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Null-field magnetron apparatus with essentially flat target, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Null-field magnetron apparatus with essentially flat target will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3231814