Static information storage and retrieval – Floating gate – Particular biasing
Patent
1992-09-25
1995-05-02
Nguyen, Viet Q.
Static information storage and retrieval
Floating gate
Particular biasing
365218, 326 49, 326112, G11C 702, H03K 19096
Patent
active
054125995
ABSTRACT:
A null consumption CMOS switch which may be set by nonvolatile programming is formed by a pair of complementary transistors preferably having a common drain and a common gate. The common gate is coupled to the floating gate a programmable and erasable, nonvolatile memory cell. The common gate/floating gate coupling can be a unitary floating gate structure. The floating gate directly drives the ON or OFF states of the two complementary transistors. On an output node of the switch, represented by the common drain of the pair of transistors, a signal present on a source node of one or the other of the two complementary transistors is replicated. The state of charge of the floating gate, imposed by programming or erasing, may be such as to reach advantageously a potential higher than the supply voltage or lower than the ground potential of the circuit. Different embodiments, such as a polarity selection, a path selector, a TRISTATE selector, and a logic gate selector are described.
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Benedetti Mirella
Daniele Vincenzo
Villa Nuccio
Dinh Son
Nguyen Viet Q.
SGS-Thomson Microelectronics S.R.L.
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