Nucleation of diamond films using an electrode

Details Nucleation of diamond films using an electrode Nucleation of diamond films using an electrode

1996-05-01

1999-10-05

Utech, Benjamin

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

117 85, 117 88, 117929, 423446, 427575, 427577, B05D 306, C23C 1626, C30B 2904, H05H 130

Patent

active

059617195

ABSTRACT:
Method and apparatus are disclosed for growing diamond films on a non-diamond substrate, such as a silicon wafer. The substrate surface is subjected to nucleation by means of a microwave-generated plasma while applying an electrical bias to the substrate and while an electrode is positioned adjacent to but spaced from the substrate surface. After the nucleation step, crystalline diamond is deposited on the nucleated surface from a carbon-containing plasma.

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