Nucleation method for atomic layer deposition of cobalt on...

Details Nucleation method for atomic layer deposition of cobalt on... Nucleation method for atomic layer deposition of cobalt on...

2006-07-18

2006-07-18

Pert, Evan (Department: 2826)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

C438S648000

Reexamination Certificate

active

07078326

ABSTRACT:
A method used to form a cobalt metal layer on a silicon surface using an atomic layer deposition (ALD) process comprises a treatment of the silicon surface prior to cobalt formation. Treatment includes serial exposure to one or more cycles comprising a titanium nitride precursor or a tantalum nitride precursor, followed by an optional exposure to ammonia. After this treatment, the silicon surface is exposed to a metal organic cobalt such as cyclopentadienylcobalt dicarbonyl to form a cobalt precursor on the silicon surface, which is then exposed to hydrogen or ammonia to reduce the precursor to an ALD cobalt metal layer. Once this initial metal layer is formed, additional cobalt ALD layers may be completed to form a cobalt metal layer of a desired thickness.

REFERENCES:
patent: 6346477 (2002-02-01), Kaloyeros et al.
patent: 6527855 (2003-03-01), DelaRosa et al.
Park et al., “A New ALD-TiN/CoSi2 Contact Plug Process for reliable and Low Defect Density Bit-Line Integration in Sub-Quarter Micron Giga-bit DRAM”, Jun. 2002, IEEE 2002 Interconnect technology Conference, pp. 282-284.
“Gas Phase Cleaning of Silicon Wafer Surfaces”, Anthony J. Muscat, Engineering Research Center for Environmentally Benign Semiconductor Manufacturing.
“Atomic Layer Deposition of Transition Metals”, Lim, et al., Nature Materials, vol. 2, Nov. 2003, pp. 749-754.

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