Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With a step of measuring – testing – or sensing
Patent
1992-08-28
1995-03-14
Kunemund, Robert
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With a step of measuring, testing, or sensing
927577, 117 95, 117103, 117929, C30B 2900
Patent
active
053974280
ABSTRACT:
A method and apparatus for enhancing the nucleation of diamond by pretreating a substrate by electrically biasing a diamond film adjacent the substrate while exposing the substrate and the thus biased diamond film to a carbon-containing plasma. The bias pretreatment may be maintained for a time period in the range of about 1 hour to 2 hours to achieve a high diamond nucleation density. Alternatively, the biasing may be continued until diamond film formation is indicated by a change in reflectivity of the surface of the substrate. The biasing pretreating may be used to nucleate diamond heteroepitaxially on a substrate having a surface film formed of a material having a relatively close lattice match to diamond, such as .beta.-silicon carbide. The apparatus includes a laser reflection interferometer to monitor the surface of the substrate. The laser reflection interferometer is used to monitor growth of the diamond film and cooperates with a controller to control the processing parameters during the diamond growing process.
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Glass Jeffrey T.
Hooke William M.
Stoner Brian R.
Williams Bradley E.
Kunemund Robert
North Carolina State University
The University of North Carolina at Chapel Hill
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