Nuclear voltaic cell

Details Nuclear voltaic cell Nuclear voltaic cell

2005-08-29

2011-12-06

Palabrica, Ricardo (Department: 3663)

Induced nuclear reactions: processes, systems, and elements

Combined

With direct conversion means

C376S317000, C136S202000, C322S088000

Reexamination Certificate

active

08073097

ABSTRACT:
The invention describes a product and a method for generating electrical power directly from nuclear power. More particularly, the invention describes the use of a liquid semiconductor as a means for efficiently converting nuclear energy, either nuclear fission and/or radiation energy, directly into electrical energy. Direct conversion of nuclear energy to electrical energy is achieved by placing nuclear material in close proximity to a liquid semiconductor. Nuclear energy emitted from the nuclear material, in the form of fission fragments or radiation, enters the liquid semiconductor and creates electron-hole pairs. By using an appropriate electrical circuit an electrical load is applied and electrical energy generated as a result of the creation of the electron-hole pairs.

REFERENCES:
patent: 3344289 (1967-09-01), Knight
patent: 3706893 (1972-12-01), Olsen et al.
patent: 4212179 (1980-07-01), Juergens
patent: 4259419 (1981-03-01), Uba et al.
patent: 4493221 (1985-01-01), Stieg et al.
patent: 4521498 (1985-06-01), Juergens
patent: 4592972 (1986-06-01), Juergens et al.
patent: 4606982 (1986-08-01), Nelson et al.
patent: 5045086 (1991-09-01), Juergens
patent: 5047300 (1991-09-01), Juergens
patent: 5082505 (1992-01-01), Cota et al.
patent: 5198313 (1993-03-01), Juergens
patent: 5260621 (1993-11-01), Little et al.
patent: 5606213 (1997-02-01), Kherani et al.
patent: 5677078 (1997-10-01), Juergens et al.
patent: 5859484 (1999-01-01), Mannik et al.
patent: 5895728 (1999-04-01), Walker et al.
patent: 6004689 (1999-12-01), Walker et al.
patent: 6118204 (2000-09-01), Brown
patent: 6700298 (2004-03-01), Snyder et al.
patent: 6944254 (2005-09-01), Kormuth et al.
patent: 7193237 (2007-03-01), Aramaki et al.
patent: WO-2005053062 (2005-06-01), None
Denninger, Schottky Contacts, Semiconductor physicsl, WS 2001/2002 Denninger, available @ http://www.ee.sc.edu/research/SiC—Research/papers/schottkycontacts.pdf, last access Nov. 14, 2005.
Godlevsky et al., Ab Initio Molecular dynamics Simulation of Liquid CdTe and GaAs: Semiconducting versus Metallic Behavior, Department of Chemical Engineering and Material Sciences, Minnesota Supercomnputer Institute, University of Minnesota, May 13, 19988.
Yu et al., Molecular-Dynamics study of surface segregation in liquid semiconductor alloys, Department of Physics, The Ohio State University, Columbus, Ohio, May 16, 1997.
Price et al. ,Rotator Phrases in Narrow-Gap Semiconductors, Argonne National Laboratory, Dec. 1993.
Kulkami et al.., Ab initio molecular-dynamics study of the structural and transportat properties of liquid germanium, Department of Physics, The Ohio State University, Columbus, Ohio, Dec. 11, 1996.
Mattiesen et al.., Diffusion Processes in Molten Semiconductors, Mar. 2002, available@ http://zeta.lerc.nasa.gov/expr3/dpims.httm, last accesed Nov. 15, 2005.
Greuter, “Electronic surface properties of a liquid semiconductor:selenium”, J. Phys.C:Solid State Phys. 18(1985) 2527-2537.
Semiconductor Surfaces and Interfaces.
“4-pocket Electron Bean Evaporator”,e-flux4, tec tra, 5 Pages.
“Annealing (Metallurgy)”, Wikipedia, http://en.wikipedia.org/wiki/Annealing—%28metallurgy%29, 1 Page.
“Carbon Coaters, Sputter Coaters and Turbo Sputter Coaters”,Electron Microscopy Scienes, http://www.emsdiasurn.com/microscopy/products/equipment/carbon—coaters.aspx, 8 Pages.
“E-beam Evaporator”, Brigham Young University, Department of Electrical & Computer Engineering, http://www.ee.byu.edu/cleanroom/ebeam.phtml, (Observed Nov. 7, 2006),2 Pages.
“E-beam Evaporators”,Oxford Scientific, http://www.oxsci.com/pages/products/evaporators/index.htm, (Obersved Nov. 7, 2006,5 Pages.
“Laboratory Sputter Coating Equipment”,Thin Film Coating, Deposition&Sputtering Equipment, http://www.emitech.co.uk/sputtering-coating.htm, 3 Pages.
“Rototherm—Thin Flim Evaporator”, Artisan Industries, Inc., http://www.artisnind.com/chemical/rototherm.htm, (Observed Nov. 7, 2006),2 Pages.
“Sputter Coating Technical Brief”,Quorum Technologies, Polaron, Issue 1, Document No. TB-Sputter, 13 Pages.
“Sputter-Coater high vaccuum coating system for thin flim deposition”, http://www.tectra.de/spuco.htm, (Observed Nov. 7, 2006),5 Pages.
Allgaier, R S., “Interpretation of transport Measurements in Electronically Conducting Liquids”,Physical Review, vol. 185, No. 1, (Sep. 5, 1969),227-244.
Brillson, Leonard J., “Contacts to Semiconductors”,Contacts to Semiconductors, Fundamentals and Technology, Xerox Corporation, Noyes Publications, New Jersey, (1993).
Bullock, Alan , et al., “The Harper Dictionary of Modern Though,”,The Harper Dictionary of Modern Thought, Harper&Row, New York, (1977),p. 25.
Considine, Glenn D.,Encyclopedia of Chemistry, Fifth Edition, Van Nostrand's, John Wiley&Sons, Inc., (2005).
Considine, G D., “Van Nostrand's Scientific Scientific Encyclopedia”,Van Nostrand's Scientific Encyclopedia, Ninth Edition, vol. 1, John Wiley&Sons, New York, (2002),175.
Cutler, Melvin , “Experimental Methods”,Chapter 4, Liquid Semiconductors, Academic Press Inc., (1977),7 Pages.
Denninger, “Schottky Contacts, Seminconductor Physics1”, (Nov. 14, 2005).
Enderby, J. E., “Liquid semiconductors”,Rep. Proq. Phys., 53, (1990),85-179.
Farrell, Martin V., et al., “Coupling of Buoyant Convections in Boron Oxide and a Molten Semiconductor in a Ventical Magnetic Field”,Journal of Heat Transfer, vol. 124, (Aug. 2002),643-649.
Gearhart, Steven S., et al., “A Monolithic 250 GHz Schottky-Diode Receiver”,IEEE Transactions on Microwave Theory and Techniques, vol. 42, No. 12, (Dec. 1994),2504-2511.
Ghosh, P. K., et al., “Electronic transport in Liquid and solid sulphur”,J. Phys. C(Proc. Phys. Soc.),Series 2, vol. 1, (1968), 1347-1358.
Glazov, Vasilii M., et al., “Liquid Semiconductors”,Liquid Semiconductors, Plenum Press, New York, (1969).
Gobrecht, H , et al., “Electrical properties of liquid selenium up to 1300K”,J. Phys. C: Soild St. Phys., vol. 4, (1971),2247-2253.
Gray, H. J., et al., “A New Dictionary of Physics”,A New Dictionary of Physics, Second Edition, Longman London, (1975),p. 23.
Greacen, Chris , “How Photovoltaics Cells Work”,Photovoltaics, Home Power # 23, (Jun.-Jul. 1991),37-39.
Greenwood, N. N., et al., “Chemistry of the Elements”,Chemistry of the Elements, Pergamon Press, New York, (1984),p. 1121.
Harrell, William R., “Aluminum schottky contacts to n-type 4H-SiC”,Look Smart, http://findarticles.com/p/articles/mi—qa3776/is—200210/ai—n9137011, (Oct. 2004),4 pages.
Hartke, J. L., et al., “Electronic States in Vitreous Selenium”,Physical Review, vol. 139, No. 3A, (Aug. 2, 1965),A970-A980.
Hosokawa, Shinya , et al., “Electronic Properties of Liquid Selenium Containing Alkali and Halogen Impurities”,Journal of the Physical Society of Japan, vol. 54, No. 12, (Dec. 1985),4717-4725.
Ioffe, A. F., et al., “Non-Crystalline, Amorphous, and Liquid Electronic Semiconductors”,Progress in Semiconductors, vol. 4, (1960),239-291.
Jamali, Behnam , et al., “Design and optimisation of Schottky diodes in CMOS technology with application to passive RFID systems”,School of Electrical and Electronics Engineering, University of Adelaide, S.A. 5005, Australlia, 9 Pages.
Knoll, Glenn F., “Radiation Detection and Measurement”,Radiation Detection and Measurement, Third Edition, John Wiley&Sons, Inc., New York, (2000).
Koslowski, Thorsten , et al., “Modified small-world networks as models of liquid and amorphous selenium”,Physical Review B, vol. 66 (064205), (2002),7 Pages.
Kresse, G , et al., “Defects in liquid selenium”,Physical Review B, vol. 59, No. 5, (1998),3501-3513.
Lee, Ching-Ting , “Performa

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