NPN transistor with base double doped with arsenic and boron

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357 34, 357 90, H01L 29163, H01L 2972

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046672184

ABSTRACT:
A semiconductor device comprising an N type collector layer formed in an N type semiconductor wafer, a P type base layer which is in contact with the N type collector layer at a PN junction that extends to the surface and which contains an N type impurity material of which the energy of combination with vacancies is great and boron which is a P type impurity material, and an N type emitter layer which is so formed as to be surrounded by this P type base layer and forms a transistor together with the N type collector layer and the P type base layer and which contains the N type impurity materials phosphorus and arsenic. Arsenic or antimony or the like, which are N type impurity materials of which the energy of combination with vacancies is great are diffused in the P type base layer.

REFERENCES:
patent: 3834953 (1974-09-01), Nakamura et al.
Edel et al., Stress Relief by Counterdoping, IBM Tech. Discl. Bulletin, vol. 13, No. 3, Aug. 1970, p. 632.

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