NPN transistor with base double doped with arsenic and boron

Details NPN transistor with base double doped with arsenic and boron NPN transistor with base double doped with arsenic and boron

1980-11-19

1987-05-19

Larkins, William D.

357 34, 357 90, H01L 29163, H01L 2972

Patent

active

046672184

ABSTRACT:
A semiconductor device comprising an N type collector layer formed in an N type semiconductor wafer, a P type base layer which is in contact with the N type collector layer at a PN junction that extends to the surface and which contains an N type impurity material of which the energy of combination with vacancies is great and boron which is a P type impurity material, and an N type emitter layer which is so formed as to be surrounded by this P type base layer and forms a transistor together with the N type collector layer and the P type base layer and which contains the N type impurity materials phosphorus and arsenic. Arsenic or antimony or the like, which are N type impurity materials of which the energy of combination with vacancies is great are diffused in the P type base layer.

REFERENCES:
patent: 3834953 (1974-09-01), Nakamura et al.
Edel et al., Stress Relief by Counterdoping, IBM Tech. Discl. Bulletin, vol. 13, No. 3, Aug. 1970, p. 632.

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