NPN transistor having reduced extrinsic base resistance and...

Details NPN transistor having reduced extrinsic base resistance and... NPN transistor having reduced extrinsic base resistance and...

2006-06-20

2006-06-20

Crane, Sara (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Bipolar transistor

C257S198000, C257S592000

Reexamination Certificate

active

07064361

ABSTRACT:
According to one exemplary embodiment, an NPN bipolar transistor comprises a base layer situated over a collector, where the base layer comprises an intrinsic base region and an extrinsic base region. The NPN bipolar transistor may be, for example, an NPN silicon-germanium heterojunction bipolar transistor. The base layer can be, for example, silicon-germanium. According to this exemplary embodiment, the NPN bipolar transistor further comprises a cap layer situated over the base layer, where a portion of the cap layer is situated over the extrinsic base region, and where the portion of the cap layer situated over the extrinsic base region comprises an indium dopant. The cap layer may be, for example, polycrystalline silicon. According to this exemplary embodiment, the NPN bipolar transistor may further comprise an emitter situated over the intrinsic base region. The emitter may be, for example, polycrystalline silicon.

REFERENCES:
patent: 5126278 (1992-06-01), Kodaira
patent: 5289020 (1994-02-01), Hirose et al.
patent: 5583059 (1996-12-01), Burghartz
patent: 5681763 (1997-10-01), Ham et al.
patent: 6043130 (2000-03-01), Gregory
patent: 6087683 (2000-07-01), King et al.
patent: 6221783 (2001-04-01), Park et al.
patent: 6265275 (2001-07-01), Marty et al.
patent: 6459140 (2002-10-01), Johansson et al.
patent: 6586818 (2003-07-01), Voldman
patent: 2003/0230789 (2003-12-01), Beasom

Affiliated with

Also associated with

Rating

NPN transistor having reduced extrinsic base resistance and... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with NPN transistor having reduced extrinsic base resistance and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and NPN transistor having reduced extrinsic base resistance and... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3683103