NPN heterojunction bipolar transistor including antimonide base

Details NPN heterojunction bipolar transistor including antimonide base NPN heterojunction bipolar transistor including antimonide base

1992-05-28

1994-09-20

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257 22, 257197, 257201, H01L 29161, H01L 29205, H01L 2712

Patent

active

053492013

ABSTRACT:
A heterojunction bipolar transistor (HBT) (10,30) includes an indium-gallium-arsenide (InGaAs), indium-phosphide (InP) or aluminum-indium-arsenide (AlInAs) collector layer (14) formed over an indium-phosphide (InP) substrate (12). A base layer (16,32) including gallium (Ga), arsenic (As) and antimony (Sb) is formed over the collector layer (14), and an AlInAs or InP emitter layer (18) is formed over the base layer (16,32). The base layer may be ternary gallium-arsenide-antimonide (GaAsSb) doped with beryllium (Be) (16), or a strained-layer-superlattice (SLS) structure (32) including alternating superlattice (32b,32a) layers of undoped gallium-arsenide (GaAs) and P-doped gallium-antimonide (GaSb). The GaSb superlattice layers (32a) are preferably doped with silicon (Si), which is much less diffusive than Be.

REFERENCES:
patent: 4979009 (1990-12-01), Kusano et al.
patent: 5010382 (1991-04-01), Katoh
patent: 5063426 (1991-11-01), Chandrasekhar et al.
patent: 5150185 (1992-09-01), Yamada
"AlInAs/GaInAs HBT Technology", J. Jensen et al., IEEE Journal of Solid-State Circuits, vol. 26, No. 3, Mar. 1991, pp. 415-421.
"Band-edge alignment in heterostructures", F. Schuermeyer et al., Applied Phys. Letters, vol. 55, No. 18, Oct. 30, 1989, pp. 1877-1878.
"p-type doping of gallium antimonide grown by molecular beam epitaxy using silicon", T. Rossi et al., Applied Phys. Letters, vol. 57, No. 21, Nov. 19, 1990, pp. 2256-2258.

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