NPN equivalent structure with breakdown voltage greater than the

Details NPN equivalent structure with breakdown voltage greater than the NPN equivalent structure with breakdown voltage greater than the

1987-03-05

1988-04-26

Edlow, Martin H.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

357 48, 357 44, 307570, H01L 2980

Patent

active

047408219

ABSTRACT:
Described is an improved NPN equivalent structure with a breakdown voltage higher than the intrinsic breakdown voltage of the NPN transistor utilizing a complementary PNP transistor and a JFET transistor with the gate connected to ground, the drain connected to the base of the PNP and the source connected to the collectors of the complementary pair. An integrated form of the structure is particularly advantageous and the equivalent NPN transistor is substantially exempt from Early effect and has improved output current capacity.

REFERENCES:
patent: 4313065 (1982-02-01), Yoshida
patent: 4564855 (1986-01-01), Van Zanten
patent: 4661723 (1987-04-01), Masuda

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