NPN Darlington ESD protection circuit

Electricity: electrical systems and devices – Safety and protection of systems and devices – Transient responsive

Reexamination Certificate

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C327S432000, C327S483000

Reexamination Certificate

active

10604354

ABSTRACT:
An electrostatic discharge protection (ESD) circuit includes an NPN Darlington circuit and an n-type metal oxide semiconductor (NMOS) transistor. The drain of NMOS transistor is connected to the input end of the NPN Darlington circuit. The source of NMOS transistor is connected to the control end of the NPN Darlington circuit. The gate of NMOS transistor is connected to the output end of the NPN Darlington circuit.

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patent: 0 561 451 (1993-09-01), None
patent: 2 336 241 (1999-10-01), None
William D. Mack and Robert G. Meyer, “New ESD Protection Schemes for BiCMOS Processes With Application to Cellular Radio Designs”, 1992 IEEE, pp. 2699-2702, U.S.A.

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