Novel vertical-gate CMOS compatible lateral bipolar transistor

Details Novel vertical-gate CMOS compatible lateral bipolar transistor Novel vertical-gate CMOS compatible lateral bipolar transistor

1992-06-18

1994-08-23

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Lateral bipolar transistor structure

257514, 257515, 257518, 257557, 257563, 257583, 257587, 257588, 257592, 257347, H01L 2972

Patent

active

053410238

ABSTRACT:
A lateral bipolar transistor has an extrinsic base layer on either side of a centrally disposed emitter layer and an intrinsic base and a collector oriented perpendicularly to the extrinsic base and collector layers.

REFERENCES:
patent: 4992843 (1991-02-01), Blossfeld et al.
patent: 5047823 (1991-09-01), Treitinger et al.
patent: 5065210 (1991-11-01), Hirakawa
patent: 5101256 (1992-03-01), Harame et al.
patent: 5212397 (1993-05-01), See et al.
B. S. Meyerson, Low-temperature silicon epitaxy by ultrahigh vacuum/chemical vapor deposition, Apl. Phys. Lett. 48, 1986.
L. Jastrzebski, Epitaxial Lateral Overgrowth (ELO) Process, Journal of Crystal Growth 63 (1983) 493-526.

Affiliated with

Also associated with

Rating

Novel vertical-gate CMOS compatible lateral bipolar transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Novel vertical-gate CMOS compatible lateral bipolar transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Novel vertical-gate CMOS compatible lateral bipolar transistor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-504750