Novel technique to detect oxydonor generation in IC fabrication

Details Novel technique to detect oxydonor generation in IC fabrication Novel technique to detect oxydonor generation in IC fabrication

1987-07-27

1989-08-22

Eisenzopf, Reinhard J.

Electricity: measuring and testing

Measuring, testing, or sensing electricity, per se

With rotor

324158R, 324158SC, G01R 2726, G01R 3100

Patent

active

048599387

ABSTRACT:
A novel technique to detect oxydonor generation in semiconductor wafers. Oxydonor generation in a P-type substrate may be sufficient to create a P-N junction within the substrate which may adversely affect device performance. A technique of the present invention is a two-step process for determining the presence of such an oxydonor generated P-N junction. For a capacitor device, the capacitance of the device is measured under varying test voltages to determine a capacitance-voltage response. Then a second capacitance-voltage response is measured when the device is subjected to an external energy source. For a diode device, the forward current is measured with the device under varying test voltages to determine a current-voltage response. Then a second currrent-voltage response is measured when the device is subjected to an external energy source. By comparing device response with and without the application of external energy, a device having oxydonor generation problems is efficiently detected.

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