Novel silicon powder having high purity and density and method o

Details Novel silicon powder having high purity and density and method o Novel silicon powder having high purity and density and method o

1985-11-18

1987-04-28

Brody, Christopher W.

Chemistry of inorganic compounds

Silicon or compound thereof

Elemental silicon

423349, C01B 3302

Patent

active

046613358

ABSTRACT:
A powder of elemental silicon having high purity and a density in excess of about 0.6 g/cm.sup.3, preferably ranging from 0.8 to 1.2 g/cm.sup.3, and which is non-amorphous as determined by X-ray analysis, is facilely prepared by thermally decomposing a silane feedstream at a decomposition reaction temperature ranging from 500.degree. to 700.degree. C., preferably from 500.degree. to 600.degree. C.

REFERENCES:
patent: 4314525 (1982-02-01), Hsu et al.
Iya, S. K. et al; "Heterogeneous Decomposition of Silane in a Fixed Bed Reactor", J. Electr. Chem. Soc., vol. 129, pp. 1531-1535 (7/82).

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