Novel semiconductor-based radiation detector

Details Novel semiconductor-based radiation detector Novel semiconductor-based radiation detector

1988-02-01

1990-01-23

Edlow, Martin H.

357 2, H01L 2714

Patent

active

048962007

ABSTRACT:
A semiconductor-based radiation detector comprising a semiconductor substrate and an amorphous semiconductor layer formed on one surface of the substrate, one electrode being applied to the substrate and one to the amorphous layer, the electrodes formed on the amorphous semiconductor layer consisting of closely spaced, interconnected conductive strips which are substantially uniformly arranged over the entire radiation-incident surface of the amorphous semiconductor layer whereby the electrostatic capacitance appearing between the electrodes of the detector is significantly reduced without significantly changing the area of the detector that responds to radiation.

REFERENCES:
patent: 4228315 (1980-10-01), Napoli
patent: 4394676 (1983-07-01), Agouridis
patent: 4492813 (1985-01-01), Kausche et al.
patent: 4539431 (1985-09-01), Moddel et al.
patent: 4590327 (1986-05-01), Nath et al.
patent: 4611224 (1986-09-01), Seki et al.
patent: 4692782 (1987-09-01), Seki et al.

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