Novel gallium arsenide precursor and low temperature method of p

Details Novel gallium arsenide precursor and low temperature method of p Novel gallium arsenide precursor and low temperature method of p

1987-11-03

1989-11-07

Sneed, H. M. S.

Organic compounds -- part of the class 532-570 series

Organic compounds

Heavy metal containing

556 12, C07F 702

Patent

active

048793973

ABSTRACT:
A novel gallium arsenide precursor has the formula R.sub.2 GaAs(SiR').sub.2 wherein R is selected from the group consisting of alkyl substituted cycloaliphatic group and alkyl substituted aromatic group and R' is alkyl. Preferably, R is pentamethylclopentadienyl and R' is methyl. The precursor is reacted with an alcohol, preferably ethanol or t-butanol at a temperature ranging from -20.degree. C. to 60.degree. C., preferably at room temperature, under water free conditions to form solid gallium arsenide and by-products which are liquid under the reaction conditions.

REFERENCES:
patent: 2964550 (1960-12-01), Seyferth
patent: 3129059 (1964-04-01), Enk et al.
patent: 3226270 (1965-12-01), Miederer
patent: 3414597 (1968-12-01), Wilkus
patent: 3630906 (1971-12-01), Willardson et al.
patent: 3649193 (1972-03-01), Deyris
patent: 3763197 (1973-10-01), Collier
patent: 3969386 (1976-07-01), Ballard et al.
patent: 4119704 (1978-10-01), Jacob et al.
patent: 4399097 (1983-08-01), Gallagher et al.
patent: 4427714 (1984-01-01), Davey
patent: 4594264 (1986-06-01), Jensen
patent: 4609530 (1986-09-01), Morioka et al.
CA 109(20):182366y (1988).
Byrne, E. K., et al., "Design of A Monometic Arsinoga llane and Chemical Conversion to Gallium Arsenide", Science (Washington D.C. 1883-) 241(4863), pp. 332-334, 1988.
Beachley et al., Organomet., 4, 1675-1680, (1985).
Becker, V. G., et al., Z. Anorg. Allg. Chem: 462, 113-129 (1980).
Chemical & Engineering News, 9/28/87, p. 53.

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