Notched gate structure fabrication

Details Notched gate structure fabrication Notched gate structure fabrication

2005-04-05

2005-04-05

Everhart, Caridad (Department: 2825)

Semiconductor device manufacturing: process

Making passive device

Trench capacitor

C438S197000, C438S199000, C438S286000, C438S595000

Reexamination Certificate

active

06875668

ABSTRACT:
Aspects for notched gate structure fabrication are described. The notched gate fabrication includes forming spacers of hard mask material on a gate conductor, and utilizing the spacers during etching to form notches in the gate conductor and provide a notched gate structure. In a further aspect, notched gate fabrication includes performing a timed etch of masked gate conductive material to maintain a portion of a gate conductive layer and provide gate structure areas in the gate conductive layer. Anisotropically etching the gate structure areas provides spacers on the gate structure areas. Isotropically etching the portion of the gate conductive layer provides notched gates in the gate structure areas.

REFERENCES:
patent: 6218252 (2001-04-01), Yeo
patent: 6417084 (2002-07-01), Singh et al.

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