Notched compound semiconductor wafer

Details Notched compound semiconductor wafer Notched compound semiconductor wafer

2007-08-14

2007-08-14

Ngô, Ngân V. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Physical configuration of semiconductor

With specified crystal plane or axis

C257S618000, C257SE23179

Reexamination Certificate

active

11268028

ABSTRACT:
There is provided a notched compound semiconductor crystal having the same specification even if it is turned over. With respect to a compound semiconductor wafer produced by slicing a compound semiconductor crystal having a crystal plane of (100) plane, the crystal is sliced so as to be tilted from the (100) plane in a direction of [101] or [10-1] when a notch is formed in a direction of [010], or the crystal is sliced so as to be tilted from the (100) plane in a direction of [0-10] or [010] when a notch is formed in a direction of [001], or the crystal is sliced so as to be tilted from the (100) plane in a direction of [001] or [00-1] when a notch is formed in a direction of [0-10], or the crystal is sliced so as to be tilted from the (100) plane in a direction of [010] or [0-10] when a notch is formed in a direction of [00-1].

REFERENCES:
patent: 6130461 (2000-10-01), Oowaki et al.
patent: 6645834 (2003-11-01), Akiyama
patent: 6861689 (2005-03-01), Burnett
patent: 7115948 (2006-10-01), Bhattacharyya
patent: 2004/0142579 (2004-07-01), Morita et al.
patent: 2004/0262667 (2004-12-01), Bhattacharyya
patent: 2005/0001290 (2005-01-01), Chan et al.
patent: 2005/0003648 (2005-01-01), Mitani et al.
patent: 2006/0125010 (2006-06-01), Bhattacharyya

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