Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor – With specified crystal plane or axis
Reexamination Certificate
2006-02-14
2006-02-14
Ngô, Ngân V. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Physical configuration of semiconductor
With specified crystal plane or axis
C257S618000
Reexamination Certificate
active
06998700
ABSTRACT:
There is provided a notched compound semiconductor crystal having the same specification even if it is turned over. With respect to a compound semiconductor wafer produced by slicing a compound semiconductor crystal having a crystal plane of (100) plane, the crystal is sliced so as to be tilted from the (100) plane in a direction of [101] or [10−1] when a notch is formed in a direction of [010], or the crystal is sliced so as to be tilted from the (100) plane in a direction of [0−10] or [010] when a notch is formed in a direction of [001], or the crystal is sliced so as to be tilted from the (100) plane in a direction of [001] or [00−1] when a notch is formed in a direction of [0−10], or the crystal is sliced so as to be tilted from the (100) plane in a direction of [010] or [0−10] when a notch is formed in a direction of [00−1].
REFERENCES:
patent: 2004/0061200 (2004-04-01), Iwamatsu et al.
patent: 2004/0129940 (2004-07-01), Iwase et al.
patent: 2005/0001290 (2005-01-01), Chan et al.
patent: 8-195366 (1996-07-01), None
patent: 2000-331898 (2000-11-01), None
Sunachi Naoya
Toba Ryuichi
Bachman & LaPointe P.C.
Dowa Mining Co., LTD
Ngo Ngan V.
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