Notched cell ROM

Static information storage and retrieval – Magnetic bubbles – Guide structure

Patent

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Details

357 41, 357 59, 365104, 148 15, 357 23, H01L 2710, H01L 2702, H01L 2978, G11C 1700

Patent

active

044109040

ABSTRACT:
A semiconductor READ ONLY MEMORY (ROM) device is constructed by using a series of word lines as a mask during the fabrication of the underlying bit lines. The width of the word lines over each memory cell determines the characteristics of that cell (i.e. programmed or unprogrammed).

REFERENCES:
patent: 3865651 (1975-02-01), Arita
patent: 4192014 (1980-03-01), Craycraft
patent: 4272830 (1981-06-01), Moench

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