Normally-off semiconductor devices

Details Normally-off semiconductor devices Normally-off semiconductor devices

2011-07-26

2011-07-26

Malsawma, Lex (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

C257SE29246

Reexamination Certificate

active

07985986

ABSTRACT:
Normally-off semiconductor devices are provided. A Group III-nitride buffer layer is provided. A Group III-nitride barrier layer is provided on the Group III-nitride buffer layer. A non-conducting spacer layer is provided on the Group III-nitride barrier layer. The Group III-nitride barrier layer and the spacer layer are etched to form a trench. The trench extends through the barrier layer and exposes a portion of the buffer layer. A dielectric layer is formed on the spacer layer and in the trench and a gate electrode is formed on the dielectric layer. Related methods of forming semiconductor devices are also provided herein.

REFERENCES:
patent: 6849882 (2005-02-01), Walukiewicz et al.
patent: 7045404 (2006-05-01), Sheppard et al.
patent: 7112860 (2006-09-01), Saxler
patent: 2001/0040246 (2001-11-01), Ishii
patent: 2003/0218183 (2003-11-01), Micovic et al.
patent: 2005/0051796 (2005-03-01), Parikh et al.
patent: 2005/0253168 (2005-11-01), Wu et al.
patent: 2006/0019435 (2006-01-01), Sheppard et al.
patent: 2006/0043416 (2006-03-01), Li et al.
patent: 2007/0114569 (2007-05-01), Wu et al.
patent: 2007/0158692 (2007-07-01), Nakayama et al.
patent: 2007/0224710 (2007-09-01), Palacios et al.
patent: 2007/0235761 (2007-10-01), Parikh et al.
patent: 2007/0267655 (2007-11-01), Endoh et al.
patent: 2008/0017867 (2008-01-01), Spring
patent: 2008/0093626 (2008-04-01), Kuraguchi
patent: 2008/0128753 (2008-06-01), Parikh et al.
Notification of Transmittal of the International Search Report and the Written Opinion of the International Searching Authority, of the Declaration, PCT/US2009/002153, Jan. 15, 2010.
Cai et al., “High-Performance Enhancement-Mode AIGaN/GaN HEMTs Using Fluoride-Based Plasma Treatment,” IEEE Electron Device Letters, vol. 26, No. 7, pp. 435-437, Jul. 2005.
Dora, et al., “High Breakdown Voltage Achieved on AIGaN/GaN HEMTs with Integrated Slant Field Plates,” IEEE Electron Device Letters, vol. 27, No. 9, pp. 713-715, Sep. 2006.
Heikman, et al., “Non-Planar Selective Area Growth and Characterization of GaN and AlGaN,” Jpn. J. Appl. Phys., vol. 42, Part 1, No. 10, pp. 6276-6283, Oct. 2003.
Kuraguchi et al., “Normally-off GaN-MISFET with Well-Controlled Threshold Voltage,” Phys. Stat. Sol. (a) vol. 204, No. 6, pp. 2010-2013, 2007.
Matocha et al., “High-Voltage Normally Off GaN MOSFETs on Sapphire Substrates,” IEEE Transactions on Electron Devices, vol. 52, No. 1, pp. 6-10, 2005.
Niiyama et al., “250° operation normally-off GaN MOSFETs,” Solid-State Electronics, vol. 51, pp. 784-787, 2007.
Oka et al., “AlGaN/GaN Recessed MIS-Gate HFET With High-Threshold-Voltage Normally-Off Operation for Power Electronics Applications,” IEEE Electron Device Letters, vol. 29, No. 7, pp. 668-670, Jul. 2008.
Suh et al., “High-Breakdown Enhancement-Mode AIGaN/GaN HEMTs with Integrated Slant Field-Plate,” Proceedings from IEEE International Electron Device Meeting, pp. 911-913, 2006.
Uemoto et al., “A Normally-off AIGaN/GaN Transistor with RonA=2.6mΩcm2and BVds=640V Using Conductivity Modulation,” Proceedings from IEEE International Electron Device Meeting, pp. 907-910, 2006.
U.S. Appl. No. 11/286,805, filed Nov. 23, 2005.
International Preliminary Report on Patentability, PCT/US2009/002153, Feb. 10, 2011.

Affiliated with

Also associated with

Rating

Normally-off semiconductor devices does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Normally-off semiconductor devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Normally-off semiconductor devices will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2713902