Normally-off semiconductor device with low on resistance and cir

Details Normally-off semiconductor device with low on resistance and cir Normally-off semiconductor device with low on resistance and cir

1983-01-03

1985-03-19

Larkins, William D.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

357 21, 357 22, 357 35, 307570, H01L 2972, H01L 2980

Patent

active

045062820

ABSTRACT:
A semiconductor device incorporates a JFET serially connected to a bipolar transistor to achieve normally-off operation. An impedance element is connected between the base of the bipolar transistor and the gate of the JFET, which serves as a single control electrode for the entire device. When a current is supplied to the control electrode, the bipolar transistor and JFET are both switched to the on state. In the JFET, the p-N junction between the gate region and the channel region is sufficiently forward-biased so as to inject current carriers into its channel region and markedly reduce the device on-resistance. An electrical circuit analogue of the device achieves the advantage of low on-resistance and normally-off operation.

REFERENCES:
J. Nishizawa et al., "Bipolar Mode Static Induction Transistor (BSIT)-High Speed Switching Device," International Electron Devices Meeting, 1978, pp. 676-679.
A. Caruso et al., "New Semiconductor Active Device: The Conductivity Controlled Transistor," Electron Lett., vol. 15(1979), pp. 267-268.
B. J. Baliga, "Bipolar Operation of Power Junction Gate Field Effect Transistors," Electron Lett., vol. 16(1980), pp. 300-301.
B. J. Baliga, "Silicon Power Field Control Device and Integrated Circuits," Silicon Integrated Circuits--Part B, D. Khang, editor, New York: Academic Press (1981), pp. 193-199.
Application Ser. No. 257,080, filed Apr. 24, 1981, by B. J. Baliga and M. S. Adler (GE Docket No. RD-13,176).

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