Normally-off semiconductor device with low on resistance and cir

Details Normally-off semiconductor device with low on resistance and cir Normally-off semiconductor device with low on resistance and cir

1984-12-24

1987-02-24

Zazworsky, John

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307303, H03K 1756

Patent

active

046459570

ABSTRACT:
A semiconductor device incorporates a JFET serially connected to a bipolar transistor to achieve normally-off operation. An impedance element is connected between the base of the bipolar transistor and the gate of the JFET, which serves as a single control electrode for the entire device. When a current is supplied to the control electrode, the bipolar transistor and JFET are both switched to the on state. In the JFET, the P-N junction between the gate region and the channel region is sufficiently forward-biased so as to inject current carriers into its channel region and markedly reduce the device on-resistance. An electrical circuit analogue of the device achieves the advantage of low on-resistance and normally-off operation.

REFERENCES:
patent: 3963946 (1976-06-01), Zajac
D. C. Wyland, "Improving Performance of Transistors" IBM Technical Disclosure Bulletin, vol. 13, No. 1, Jun. 1970, pp. 204-205.

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