Normally off schottky barrier field effect transistor and method

Details Normally off schottky barrier field effect transistor and method Normally off schottky barrier field effect transistor and method

1974-08-28

1976-03-23

James, Andrew J.

357 23, 29589, H01L 2948, H01L 2956

Patent

active

039464156

ABSTRACT:
A normally-off field effect transistor having the structure of an IGFET with a substantially undoped semiconductor material replacing the insulation between the substrate and the gate metal. A Schottky barrier formed between the gate metal and the substantially undoped semiconductor material produces a channel in the substrate when reverse biased. Method of fabrication is also described.

REFERENCES:
patent: 3263095 (1966-07-01), Fang
patent: 3611067 (1971-10-01), Oberlin
patent: 3665262 (1972-05-01), Yamashita et al.
patent: 3711745 (1973-01-01), Moroney
patent: 3855690 (1974-12-01), Kim

Affiliated with

Also associated with

Rating

Normally off schottky barrier field effect transistor and method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Normally off schottky barrier field effect transistor and method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Normally off schottky barrier field effect transistor and method will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1647059