Normally off Schottky barrier field effect transistor and method

Details Normally off Schottky barrier field effect transistor and method Normally off Schottky barrier field effect transistor and method

1975-12-24

1976-12-14

Tupman, W.

Metal working

Method of mechanical manufacture

Assembling or joining

357 15, 357 23, B01J 1700

Patent

active

039966569

ABSTRACT:
A normally-off field effect transistor having the structure of an IGFET with a substantially undoped semiconductor material replacing the insulation between the substrate and the gate metal. A Schottky barrier formed between the gate metal and the substantially undoped semiconductor material produces a channel in the substrate when reverse biased. Method of fabrication is also described.

REFERENCES:
patent: 3263095 (1966-07-01), Fang
patent: 3611067 (1971-10-01), Oberlin
patent: 3623925 (1971-11-01), Jenkins
patent: 3673471 (1972-06-01), Klein

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