Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Reexamination Certificate
2009-09-23
2010-12-28
Smith, Matthew S (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Field effect transistor
C257SE21566, C438S259000, C438S270000, C438S271000, C438S272000, C438S481000
Reexamination Certificate
active
07859017
ABSTRACT:
A normally-off HEMT is made by first providing a substrate having its surface partly covered with an antigrowth mask. Gallium nitride is grown by epitaxy on the masked surface of the substrate to provide an electron transit layer comprised of two flat-surfaced sections and a V-notch-surfaced section therebetween. The flat-surfaced sections are formed on unmasked parts of the substrate surface whereas the V-notch-surfaced section, defining a V-sectioned notch, is created by lateral overgrowth onto the antigrowth mask. Aluminum gallium nitride is then deposited on the electron transit layer to provide an electron supply layer which is likewise comprised of two flat-surfaced sections and a V-notch-surfaced section therebetween. The flat-surfaced sections of the electron supply layer are sufficiently thick to normally generate two-dimensional electron gas layers due to heterojunctions thereof with the first and the second flat-surfaced section of the electron transit layer. The V-notch-surfaced section of the electron supply layer is not so thick, normally creating an interruption in the two-dimensional electron gas layer.
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Parker John M
Sanken Electric Co. Ltd.
Smith Matthew S
Woodcock & Washburn LLP
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