Normal pressure CVD process for manufacture of a semiconductor d

Details Normal pressure CVD process for manufacture of a semiconductor d Normal pressure CVD process for manufacture of a semiconductor d

1993-07-29

1995-10-17

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

148DIG118, H01L 21316

Patent

active

054591082

ABSTRACT:
There is provided a semiconductor device manufacturing process which enables film deposition at low temperatures and can produce an interlayer insulating film of good quality which exhibits good surface smoothing effect. In the TEOS-O.sub.3 system normal pressure CVD process, film growth is carried out by adding to TEOS source a source containing nitrogen in its composition. For the source is used heptamethyl disilazane (chemical formula (CH.sub.3).sub.3 SiN(CH.sub.3)Si(CH.sub.3).sub.3), N, O-bis-trimethylsilyl acetamide (chemical formula (CH.sub.3)C(OSi(CH.sub.3).sub.3)(NSi(CH.sub.3).sub.3)) or tridimethylamino silane (chemical formula (CH.sub.3).sub.2 N).sub.3 SiN). Also, there is provided a semiconductor device manufacturing method which enables film deposition at a uniform growth rate irrespective of the substrate material and can produce a silicon oxide film of good quality which exhibits good surface smoothing effect. An organic source having an Si--N bond in its composition and O.sub.3 are conducted to the substrate and reacted with each other under normal pressure whereby a silicon oxide film is grown on the substrate. The organic source is, for example, hexamethyl disilazane ((CH.sub.3).sub.3 Si--N(H)--Si(CH.sub.3 ).sub.3).

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Garcia et al, Journal of Chemical Vapor Deposition Copyright 1994, ACS, vol. 1-Jan. 1993, pp. 232-251.

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