Static information storage and retrieval – Floating gate – Particular biasing
Patent
1994-08-02
1996-05-28
Nelms, David C.
Static information storage and retrieval
Floating gate
Particular biasing
36518527, 365201, 36518526, 371 214, G11C 700
Patent
active
055218687
ABSTRACT:
The present invention permits the re-writing of data selectively only in cells in which data is written incompletely. A non-volatile memory is set in a re-write mode when a bit line voltage is high (H). In the re-write mode, a sense amplifier and a selected cell are activated. Because latched data in the sense amplifier is high (H), the electrons in the selected cell produce FN-tunneling, thereby writing data "0" in the selected cell. Because the bit line level of voltage (BLR) of the other cells in which data is written completely is reduced to a low level (L), the latched data in the sense amplifier is reduced to a low level (L). Accordingly, when the word line of a selected cell is connected to other cells in which data is written completely, because data is prevented from being re-written in said other cells, the threshold levels of the various cells remain equal and do not become distributed broadly.
REFERENCES:
patent: 5053990 (1991-10-01), Kreifels et al.
patent: 5172338 (1992-12-01), Mehrotra et al.
patent: 5321699 (1994-06-01), Endoh et al.
patent: 5357462 (1994-10-01), Tanaka et al.
Dinh Son
Kananen Ronald P.
Nelms David C.
Sony Corporation
LandOfFree
NOR-type non-volatile memory using tunnel current and having sel does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with NOR-type non-volatile memory using tunnel current and having sel, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and NOR-type non-volatile memory using tunnel current and having sel will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-792494