Nonvolative semiconductor memory device and operating method...

Static information storage and retrieval – Floating gate – Disturbance control

Reexamination Certificate

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C365S185210, C365S185230, C365S185200, C365S189040

Reexamination Certificate

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07495955

ABSTRACT:
A nonvolatile semiconductor memory device includes a plurality of nonvolatile memory cells for a user area and a trimming data storage area; and a plurality of word lines. A first trimming data is stored in the trimming data storage area, and is for adjusting a read voltage to be applied to a selected word line as one of the plurality of word lines in a read operation. The read voltage is set to a voltage which exceeds a maximum voltage in an adjustable voltage range based on the first trimming data when the read operation is carried out to the trimming data storage area.

REFERENCES:
patent: 2005/0285301 (2005-12-01), Mochizuki
patent: 2004-055081 (2004-02-01), None

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