Nonvolatile static memory device utilizing separate power suppli

Static information storage and retrieval – Powering – Data preservation

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365185, 365154, 365 95, 365226, G11C 1400

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050519581

ABSTRACT:
A semiconductor nonvolatile memory device includes a static type RAM constituted by a flip-flop circuit having a pair of loads, each load being supplied by separate power sources. An electrically erasable programmable ROM is constituted by a nonvolatile memory transistor operatively connected to the flip-flop circuit. A control circuit controls the supply timing of each of the separate power sources when data stored in the nonvolatile memory transistor is recalled to the flip-flop circuit. In the recall, the supply timing of each of the separate power sources is determined in such a way that the flip-flop circuit is set so as to invert from one state to the other corresponding to the ON/OFF state of the nonvolatile memory transistor.

REFERENCES:
patent: 3757313 (1973-09-01), Hines et al.
patent: 4400799 (1983-08-01), Gudger
Becker et al., "A 5v Only 4K Nonvolatile Static Ram", IEEE ISSCC, Digest of Technical Papers, Feb. 1983, pp. 170-171.
IEEE Journal of Solid-State Circuits, vol. SC-18, No. 5, Oct. 1983, pp. 525-532, IEEE, New York, D. J. Lee et al., "Control Logic and Cell Design for a 4K NVRAM".

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