Nonvolatile semiconductor storage device and write time...

Static information storage and retrieval – Powering

Reexamination Certificate

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C365S230060

Reexamination Certificate

active

06987703

ABSTRACT:
A flash memory constructed of a plurality of memory cells M11, . . . , Mn3selected by the outputs of an X-decoder1and a Y-decoder2for generating a row address and a column address is provided with a measurement use write pulse generator circuit7,which simultaneously supplies write signals of different pulse widths to the memory cells on an identical column, and a select circuit5,which switches over so as to supply the write signals from the measurement use write pulse generator circuit7to the word lines M11, . . . , Mn1on the identical column during pulse width measurement and supply the word line signal from the X-decoder1to the corresponding one word line WL1during normal access. According to this flash memory, the total write time can be reduced by reducing the frequency of repetition of write and verify.

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