Nonvolatile semiconductor storage device, and liquid crystal...

Details Nonvolatile semiconductor storage device, and liquid crystal... Nonvolatile semiconductor storage device, and liquid crystal...

2006-08-08

2006-08-08

Phan, Trong (Department: 2827)

Static information storage and retrieval

Floating gate

Particular connection

C365S185170

Reexamination Certificate

active

07088617

ABSTRACT:
A nonvolatile semiconductor storage device including: a plurality of memory cell unit groups each comprising one or more NAND nonvolatile memory cell units each comprising at least one memory cell having a control gate, a first selection transistor having a first selection gate, and a second selection transistor having a second selection gate, the memory cell unit groups each further comprising a control gate line connected to the control gate, a first selection gate line connected to the first selection gate, and a second selection gate line connected to the second selection gate; a common control gate line connected commonly to the control gate lines of different ones of the memory cell unit groups; a first common selection gate line connected commonly to the first selection gate lines of different ones of the memory cell unit groups; and a second common selection gate line connected commonly to the second selection gate lines of different ones of the memory cell unit groups; wherein the memory cells in the respective memory cell unit groups are each uniquely selected on the basis of a combination of the common control gate line and the first and second common selection gate lines.

REFERENCES:
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patent: 6240022 (2001-05-01), Sakui et al.
patent: 6370062 (2002-04-01), Choi
patent: 6728139 (2004-04-01), Masuoka
patent: 6807100 (2004-10-01), Tanaka
patent: 6839283 (2005-01-01), Futatsuyama et al.
patent: 2002-057231 (2002-02-01), None

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