Static information storage and retrieval – Floating gate – Multiple values
Reexamination Certificate
2008-11-17
2010-11-30
Nguyen, VanThu (Department: 2824)
Static information storage and retrieval
Floating gate
Multiple values
C365S185090, C365S185120, C365S185200
Reexamination Certificate
active
07843728
ABSTRACT:
A nonvolatile semiconductor storage device capable of storing a plurality of bits of data in one memory cell by assigning multivalued data having a higher-order bit selected from one of a pair of data in a first unit and a lower-order bit selected from the other of the pair of data to each threshold voltage of the memory cell, wherein in a first write operation that processes data in the first unit, the logic of one of the higher-order bit and the lower-order bit is fixed, and two pieces of multivalued data that maximize the difference between the threshold voltages are assigned, thereby storing one bit of input data in the one memory cell in a pseudo binary state, and in a second write operation that processes data in a second unit larger than the first unit, a plurality of bits of input data is stored in the one memory cell in a multivalued state, and parity data for error correction in the second unit is stored in the memory cell.
REFERENCES:
patent: 6801468 (2004-10-01), Lee
patent: 2006/0181934 (2006-08-01), Shappir et al.
patent: 2001-210082 (2001-08-01), None
patent: 2005-108303 (2005-04-01), None
Honda Yasuhiko
Iwamoto Masao
Kinjo Kiyochika
Suzuki Takahiro
Kabushiki Kaisha Toshiba
Nguyen Van-Thu
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
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