Nonvolatile semiconductor storage device

Static information storage and retrieval – Addressing – Particular decoder or driver circuit

Reexamination Certificate

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C365S185050, C365S230030

Reexamination Certificate

active

07738313

ABSTRACT:
A nonvolatile semiconductor memory comprising: a plurality of memory cell blocks each including a plurality of memory cells serially connected to each other; a word line that is connected to corresponding ones of the plurality of memory cells each included in respective one of the plurality of memory cellblocks; and a pair of drive circuits each configured to apply a voltage to the word line, wherein the corresponding ones of the plurality of memory cells are connected to the word line between the pair of drive circuits.

REFERENCES:
patent: 5703804 (1997-12-01), Takata et al.
patent: 6337807 (2002-01-01), Futatsuyama et al.
patent: 6873561 (2005-03-01), Ooishi
patent: 6903981 (2005-06-01), Futatsuyama et al.
patent: 6947317 (2005-09-01), Iwata
patent: 7151686 (2006-12-01), Sugimae et al.
patent: 2005/0094428 (2005-05-01), Futatsuyama et al.
patent: 2001-189087 (2001-07-01), None
patent: 2005-100538 (2005-04-01), None
patent: 2005-190665 (2005-07-01), None

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