Nonvolatile semiconductor storage device

Details Nonvolatile semiconductor storage device Nonvolatile semiconductor storage device

2005-09-27

2005-09-27

Hoang, Huan (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185290, C365S185180, C365S185220

Reexamination Certificate

active

06950347

ABSTRACT:
A nonvolatile memory device of the present invention performs a programming operation by accumulating a charge in certain capacitance which is provided for each programming memory cell and injecting hot electrons generated when the charge is discharged via the memory cell into a floating gate. Thus, a variation in a programming characteristic of the nonvolatile semiconductor memory device is reduced, thereby realizing high-speed programming operation.

REFERENCES:
patent: 5659505 (1997-08-01), Kobayashi et al.
patent: 6285596 (2001-09-01), Miura et al.
patent: 6438028 (2002-08-01), Kobayashi et al.
patent: 6-20485 (1994-01-01), None
patent: 9-181280 (1997-07-01), None
patent: 2000-30471 (2000-01-01), None
patent: 2001-28428 (2001-01-01), None
Hitoshi Kume, “Applied Physics”, vol. 65, No. 11, pp. 1114-1124, The Japan Society of Applied Physics on Jan. 10, 1996.
International Search Report.

Affiliated with

Also associated with

Rating

Nonvolatile semiconductor storage device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Nonvolatile semiconductor storage device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nonvolatile semiconductor storage device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3434281