Static information storage and retrieval – Floating gate – Particular connection
Reexamination Certificate
2005-10-25
2005-10-25
Mai, Son (Department: 2827)
Static information storage and retrieval
Floating gate
Particular connection
C365S185330, C365S189030, C365S230030
Reexamination Certificate
active
06958935
ABSTRACT:
The present invention relates to a nonvolatile semiconductor memory, that is, a flash memory and especially to a NAND type flash memory device capable of selectively controlling data input/output units by an address control. In the NAND type flash memory device, a memory cell array is divided into a plurality of blocks, and a data input/output path is selectively controlled by a predetermined data rate option and introduced addresses to perform data input/output operations at a ×8 or ×16 speed in one chip.
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English language abstract of Korea Publication No. 1997-59710.
English language abstract of Korea Publication No. 1020020091932.
Kwon Oh-Suk
Lee Hyoung-Woo
Lee June
Mai Son
Marger & Johnson & McCollom, P.C.
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