Nonvolatile semiconductor memory with a plurality of erase decod

Static information storage and retrieval – Floating gate – Particular connection

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Details

36518505, 36518511, 36518513, 36518529, 36523006, G11C 1606

Patent

active

057611190

ABSTRACT:
A non-volatile semiconductor memory cell including: a plurality of blocks each having a plurality of floating gate transistors as memory cells, the floating gate transistor having a drain, a source, a floating gate, and a control gate capacitively coupled to the floating gate, and a data program of the floating gate transistor being effected by data write through injection of electrons into the floating gate and by data erase through emission of electrons from the floating gates; a circuit unit for applying an erase signal to a selected one of the blocks to emit electrons from the floating gates of a plurality of memory cells in the selected block and to erase data in all of the memory cells in the selected block at the same time; and a circuit unit for applying a write signal to the drains of the floating gate transistors within the selected block, without applying the write signal to the drains of the floating gate transistors of non-selected blocks.

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