Static information storage and retrieval – Floating gate – Particular connection
Reexamination Certificate
2011-06-28
2011-06-28
Nguyen, Tuan T (Department: 2824)
Static information storage and retrieval
Floating gate
Particular connection
C365S185070, C365S154000
Reexamination Certificate
active
07969780
ABSTRACT:
An object of this invention is to provide a rewritable nonvolatile memory cell that can have a wide reading margin, and can control both a word line and a bit line by changing the level of Vcc. As a solution, a flip-flop is formed by cross (loop) connect of inverters including memory transistors that can control a threshold voltage by charge injection into the side spacer of the transistors. In the case of writing data to one memory transistor, a high voltage is supplied to a source of the memory transistor through a source line and a high voltage is supplied to a gate of the memory transistor through a load transistor of the other side inverter. In the case of erasing the written data, a high voltage is supplied to the source of the memory transistor through the source line.
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Kawajiri Yoshiki
Mihara Masaaki
Ogura Taku
Genusion Inc.
Nguyen Tuan T
Reidlinger R Lance
The Marbury Law Group PLLC
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