Nonvolatile semiconductor memory that eases the dielectric stren

Details Nonvolatile semiconductor memory that eases the dielectric stren Nonvolatile semiconductor memory that eases the dielectric stren

1994-01-25

1995-04-11

Fears, Terrell W.

Static information storage and retrieval

Powering

365185, 365218, 365900, G11C 1300

Patent

active

054065240

ABSTRACT:
An object of the present invention is to ease the dielectric strength requirements for transistors forming power supply circuits or the like. A nonvolatile semiconductor memory of the present invention includes a plurality of memory cells, each of which is composed of a floating gate, a control gate, a drain, and a source, and a negative voltage generating means whose generated negative voltage is applied to the control gate for drawing a charge stored in the floating gate into a channel or the source when stored data is erased electrically. The nonvolatile memory of the present invention further includes positive erasure voltage generating means, and a positive voltage higher than a conventional supply voltage generated by the positive erasure voltage generating means is applied to the channel or the source.

REFERENCES:
patent: 3660819 (1972-05-01), Frohman-Boutdkovsky

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