Static information storage and retrieval – Floating gate – Multiple values
Reexamination Certificate
2007-03-23
2008-03-11
Ho, Hoai V. (Department: 2827)
Static information storage and retrieval
Floating gate
Multiple values
C365S185170, C365S185220, C365S185250, C365S185280, C365S222000
Reexamination Certificate
active
07342825
ABSTRACT:
Data having three values or more is stored in a memory cell in a nonvolatile manner. A data circuit has a plurality of storage circuits. One of the plurality of storage circuits is a latch circuit. Another one of the plurality of storage circuits is a capacitor. The latch circuit and the capacitor function to temporarily store program/read data having two bits or more. Data held by the capacitor is refreshed using the latch circuit if data variation due to leakage causes a program. As a result, the data circuit does not become large in size even if multi-level data is used.
REFERENCES:
patent: 5748529 (1998-05-01), Lee
patent: 5870334 (1999-02-01), Hemink et al.
patent: 5920507 (1999-07-01), Takeuchi et al.
patent: 5966326 (1999-10-01), Park et al.
patent: 5969985 (1999-10-01), Tanaka et al.
patent: 5982667 (1999-11-01), Jyouno et al.
patent: 6055181 (2000-04-01), Tanaka et al.
patent: 6058042 (2000-05-01), Nobukata
patent: 6072719 (2000-06-01), Tanzawa et al.
patent: 6091640 (2000-07-01), Kawahara et al.
patent: 6122193 (2000-09-01), Shibata et al.
patent: 6125052 (2000-09-01), Tanaka
patent: 6134140 (2000-10-01), Tanaka et al.
patent: 6307807 (2001-10-01), Sakui et al.
patent: 04192188 (1992-10-01), None
patent: 08315586 (1996-01-01), None
patent: 08147976 (1996-07-01), None
patent: 09326197 (1997-12-01), None
patent: 1211040 (1999-03-01), None
patent: 11167800 (1999-06-01), None
patent: 11176169 (1999-07-01), None
patent: 11176178 (1999-07-01), None
patent: 3153730 (2001-01-01), None
patent: 19960042759 (1996-12-01), None
patent: 1999-0063059 (1999-07-01), None
patent: 20010082527 (2001-08-01), None
Jung, T.S. et al., “A 3.3V 128Mb Multi-Level NAND Flash Memory for Mass Storage Applications,” 1996 IEEE International Solid-State Circuits Conference, pp. 32-33.
Shibata Noboru
Takeuchi Ken
Tanaka Tomoharu
Banner & Witcoff , Ltd.
Ho Hoai V.
Kabushiki Kaisha Toshiba
LandOfFree
Nonvolatile semiconductor memory having plural data storage... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Nonvolatile semiconductor memory having plural data storage..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nonvolatile semiconductor memory having plural data storage... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3963104