Nonvolatile semiconductor memory for storing multivalued data

Details Nonvolatile semiconductor memory for storing multivalued data Nonvolatile semiconductor memory for storing multivalued data

2006-11-07

2009-11-24

Ho, Hoai V (Department: 2827)

Static information storage and retrieval

Floating gate

Multiple values

C365S185170, C365S185280

Reexamination Certificate

active

07623372

ABSTRACT:
A nonvolatile semiconductor memory according to the invention includes a memory cell array comprised of a multivalued memory cell for storing data on a plurality of pages, a data processing circuit for carrying out a read operation for reading data from the memory cell array and a programming operation for writing the data to the memory cell array on a page unit, and a control circuit for controlling an operation of the data processing circuit, the control circuit changing an assignment of data corresponding to a threshold voltage distribution of the multivalued memory cell depending on order of a page over which the programming operation is to be carried out in such a manner that the programming operation is executed by a transition of a threshold voltage of the multivalued memory cell in a positive direction.

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Japanese Office Action, with English translation, issued in Japanese Patent Application No. JP 2005-379641, mailed Jul. 23, 2008.

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