Nonvolatile semiconductor memory element and method for fabricat

Details Nonvolatile semiconductor memory element and method for fabricat Nonvolatile semiconductor memory element and method for fabricat

1996-08-15

1998-03-17

Yoo, Do Hyun

Static information storage and retrieval

Floating gate

Particular biasing

257315, 257321, G11C 1300

Patent

active

057294968

ABSTRACT:
This invention relates to a nonvolatile semiconductor memory element having elevated source and drain regions, a well-shaped floating gate surrounding a control gate, and leveled surface, and a method for fabricating the same. The nonvolatile semiconductor memory element includes a first conduction type substrate having a channel region, an elevated source and drain regions of second conduction type formed to have a step on the substrate separated by the channel region, a floating gate insulation film formed on exposed surfaces of the substrate corresponding to the channel region and the source and drain regions, as well-shaped floating gate formed on the floating gate insulation film on the channel region having a fixed depth and a fixed thickness, a control gate having a fixed thickness formed fully buried in the well of the floating gate so that the floating gate can surround the control gate, and an interlayer insulation film formed between the floating gate and the control gate so as to insulate the floating gate and the control gate.

REFERENCES:
patent: 5391508 (1995-02-01), Matsuoka et al.
patent: 5424567 (1995-06-01), Chen
patent: 5440158 (1995-08-01), Sung-Mu
patent: 5459091 (1995-10-01), Hwang
patent: 5460988 (1995-10-01), Hong
patent: 5480820 (1996-01-01), Roth et al.
patent: 5496753 (1996-03-01), Sakurai et al.
Fuijo Masuoka, "Technology Trend of Flash--EEPROM--Can Flash-EEPROM overcom DRAM?", 1992 Symposium on VLSI Technology Digest of Technical Papers, Jun. 2-4, 1992, Seattle, WA.

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