Patent
1975-08-25
1977-03-08
Wojciechowicz, Edward J.
357 54, H01L 2978, H01L 2934
Patent
active
040115763
ABSTRACT:
A nonvolatile semiconductor memory device of the type known as an insulated gate field effect transistor, in which a thick gate insulating layer overlaps the source and drain regions formed in a substrate. The surface of the substrate underlying the thick gate insulating layer is doped lightly with impurities having opposite conductivity relative to the substrate.
REFERENCES:
patent: 3747203 (1973-07-01), Shannon
patent: 3845327 (1974-10-01), Cricchi
Matsuo Takeshi
Uchida Yukimasa
Tokyo Shibaura Electric Company, Ltd.
Wojciechowicz Edward J.
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