Nonvolatile semiconductor memory device with a ROM block...

Details Nonvolatile semiconductor memory device with a ROM block... Nonvolatile semiconductor memory device with a ROM block...

2005-08-30

2005-08-30

Tran, Andrew Q. (Department: 2824)

Static information storage and retrieval

Floating gate

Data security

C365S185090, C365S185120, C365S185110, C365S185170, C365S185290

Reexamination Certificate

active

06937512

ABSTRACT:
A memory cell array has a first and a second storage area. The first storage area has a plurality of memory elements selected by an address signal. The second storage area has a plurality of memory elements selected by a control signal. A control circuit has a fuse element. When the fuse element has been blown, the control circuit inhibits at least one of writing and erasing from being done on the second storage area.

REFERENCES:
patent: 4571707 (1986-02-01), Watanabe
patent: 4644841 (1987-02-01), Nagashima et al.
patent: 4933898 (1990-06-01), Gilberg et al.
patent: 5363334 (1994-11-01), Alexander et al.
patent: 5576987 (1996-11-01), Ihara et al.
patent: 5590086 (1996-12-01), Park et al.
patent: 5631871 (1997-05-01), Park et al.
patent: 0920057 (1999-06-01), None
patent: 1999-0061992 (1999-07-01), None
patent: 10-0251036 (2000-05-01), None
patent: WO 93/05512 (1993-03-01), None

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