Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2007-06-15
2008-08-19
Nguyen, Viet Q (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185030, C365S185200, C365S185210, C365S189070, C365S189150, C365S189090
Reexamination Certificate
active
07414892
ABSTRACT:
A reference current generating circuit generates at least one reference current. A voltage generating circuit generates voltage. A sense amplifier compares a current caused to flow in a memory cell according to the voltage supplied from the voltage generating circuit with the reference current supplied from the reference current generating circuit. A control section is supplied with an output signal of the sense amplifier. When verifying the threshold voltage of the memory cell, the control section causes the voltage generating circuit to generate verify voltage which is the same as readout voltage generated at the time of data readout from the memory cell.
REFERENCES:
patent: 6421277 (2002-07-01), Tsunesada
patent: 6580643 (2003-06-01), Satoh et al.
patent: 6639837 (2003-10-01), Takano et al.
patent: 6714459 (2004-03-01), Hirano
patent: 6807097 (2004-10-01), Takano et al.
patent: 6807101 (2004-10-01), Ooishi et al.
patent: 6816413 (2004-11-01), Tanzawa
patent: 6882567 (2005-04-01), Wong
patent: 6937522 (2005-08-01), Funaki
patent: 7031193 (2006-04-01), Micheloni et al.
patent: 7054193 (2006-05-01), Wong
patent: 7068540 (2006-06-01), Micheloni et al.
patent: 7251165 (2007-07-01), Taito et al.
patent: 2001-325795 (2001-11-01), None
B. Pathak, et al., “A 1.8V 64Mb 100MHz Flexible Read While Write Flash Memory”, 2001 IEEE International Solid-State Circuits Conference, Session 2,, Non-Volatile Memories, 2.3, Feb. 5, 2001, 3 Pages.
Honda Yasuhiko
Kuriyama Masao
Kabushiki Kaisha Toshiba
Nguyen Viet Q
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
LandOfFree
Nonvolatile semiconductor memory device which stores... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Nonvolatile semiconductor memory device which stores..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nonvolatile semiconductor memory device which stores... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3998195