Nonvolatile semiconductor memory device which stores...

Details Nonvolatile semiconductor memory device which stores... Nonvolatile semiconductor memory device which stores...

2007-11-06

2007-11-06

Dinh, Son (Department: 2824)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185180, C365S185190, C365S236000

Reexamination Certificate

active

11401421

ABSTRACT:
A voltage generating circuit supplies first gate voltage to the control gate of a memory cell for a first control time period and supplies write voltage to the drain for a first write time period which is shorter than the first control time period when an operation of writing data into the memory cell is started. As the verify result, if it is detected that a data amount written into the memory cell is insufficient, the voltage generating circuit supplies second control voltage obtained by raising the first control gate voltage by constant voltage to the control gate for a time period which is shorter than the first control time period and supplies write voltage to the drain for a second write time period which is shorter than the first write time period.

REFERENCES:
patent: 5946231 (1999-08-01), Endoh et al.
patent: 6655758 (2003-12-01), Pasotti et al.
patent: 6788579 (2004-09-01), Gregori et al.
patent: 6937520 (2005-08-01), Ono et al.
patent: 11-39887 (1999-02-01), None

Affiliated with

Also associated with

Rating

Nonvolatile semiconductor memory device which stores... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Nonvolatile semiconductor memory device which stores..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nonvolatile semiconductor memory device which stores... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3824026