Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2011-05-31
2011-05-31
Hoang, Huan (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185280, C365S189110
Reexamination Certificate
active
07952931
ABSTRACT:
A nonvolatile semiconductor memory device includes a memory cell array having a plurality of cell units each including a preset number of memory cells and select gate transistors on drain and source sides. The nonvolatile semiconductor memory device includes a voltage control circuit to prevent occurrence of an erroneous write operation due to excessively high boost voltage of a channel when “1” is written into the memory cell.
REFERENCES:
patent: 7161833 (2007-01-01), Hemink
patent: 7259991 (2007-08-01), Aritome
patent: 7304894 (2007-12-01), Joo
patent: 2008/0084747 (2008-04-01), Hemink et al.
patent: 2001-332093 (2001-11-01), None
Nagashima Hiroyuki
Ueno Koki
Hoang Huan
Kabushiki Kaisha Toshiba
Lappas Jason
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
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