Nonvolatile semiconductor memory device which realizes...

Static information storage and retrieval – Floating gate – Particular biasing

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C365S185280, C365S189110

Reexamination Certificate

active

07952931

ABSTRACT:
A nonvolatile semiconductor memory device includes a memory cell array having a plurality of cell units each including a preset number of memory cells and select gate transistors on drain and source sides. The nonvolatile semiconductor memory device includes a voltage control circuit to prevent occurrence of an erroneous write operation due to excessively high boost voltage of a channel when “1” is written into the memory cell.

REFERENCES:
patent: 7161833 (2007-01-01), Hemink
patent: 7259991 (2007-08-01), Aritome
patent: 7304894 (2007-12-01), Joo
patent: 2008/0084747 (2008-04-01), Hemink et al.
patent: 2001-332093 (2001-11-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Nonvolatile semiconductor memory device which realizes... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Nonvolatile semiconductor memory device which realizes..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nonvolatile semiconductor memory device which realizes... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2654972

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.